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25 10V 20 4.5V 2.5V 3V
20
16
Vds=5V
Id (A)
10 Vgs=2V
Id(A)
8 125C 4 25C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 Vds (Volts) Fig 1: On-Region characteristics Vgs(Volts) Figure 2: Transfer Characteristics 1.8
15
12
5
0
60 50
Normalized On-Resistance
1.6 Vgs=4.5V 1.4 1.2 1 0.8 Vgs=10V Vgs=2.5V
Rds(on) (m:)
40 30 20 10 0 5
Vgs=2.5V
Vgs=4.5V
Vgs=10V
10
15
20
0
25
50
75
100
125
150
175
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
70 60 Id=5A
1.0E+01 1.0E+00 1.0E-01 125C
Rds(on) (m:)
50 40 30 25C 20 10 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 1.0E-06 0.0
Is (A)
125C
1.0E-02 1.0E-03 25C 1.0E-04
0.2
0.4
0.6
0.8
1.0
1.2
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=15V Id=6.9A 4
1400 1200
Capacitance (pF)
1000 Ciss 800 600 400 Coss 200 Crss
Vgs (Volts)
3
2
1
0 0 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12
0 0 5 10 Vds 15 25 (Volts) 20 Figure 8: Capacitance Characteristics 30
100.0 Tj(max)=150C Ta=25C Rds(on) 10.0 limited 100Ps 1ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms
40 Tj(max)=150C Ta=25C 30
Id (Amps)
Power (W)
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

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